df m 1000nxm33 - ts000 fast recovery diode module ds6094 - 1 april 2013 (ln30404 ) 1 / 6 www.dynexsemi.com features ? low reverse recovery charge ? high switching speed ? low forward volt drop ? isolated alsic base w ith aln substrates ? high current density enhanced dmos ? dual diodes can be paralleled for 2 0 00a rating ? low fit r ate applications ? chopper diodes ? boost and buck converters ? free - wheel circuits ? motor drives ? resonant converters ? induction heating ? multi - level switch inverters the df m 10 00n xm33 - t s 000 is a dual 33 00v, fast recovery diode (frd) module. designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing pwm and high frequency switching. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: df m 10 00n xm33 - t s 000 note: when ordering, please use the complete part number key parameters v rrm 33 00 v v f (typ) 2.4 v i f (max) 10 00 a i fm (max) 2 0 00 a external co n nection required for a single 2 0 00a diode fig. 1 circuit configuration outline type code: n (see fig. 7 for further information) fig. 2 package 3(a) 1(a) 2(k) 4(k)
df m 1000nxm33 - t s 000 2 /6 www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v rrm repeti tive peak reverse voltage t j = 150 c 3300 v i f forward current (per arm) dc, t case = 9 0 c 10 00 a i fm max. forward current t case = 135 c , t p = 1ms 2 0 00 a i 2 t i 2 t value fuse current rating v r = 0, t p = 10ms, t j = 150 c 320 ka 2 s p max max. power dissipation t case = 25c, t j = 150 c 5.2 k w v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 60 0 0 v q pd partial discharge C per module iec1287, v 1 = 35 00v, v 2 = 26 00v, 50hz rms 10 pc v rrm dc dc voltage stability 25c at sea level, 100 fits 21 00 v thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 33 mm clearance: 20 mm cti (comparative tracking index): >600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance (per arm ) continuous dissipation C th(c - h) thermal resistance C j junction temperature - 40 - 150 c t stg storage temperature range - 40 - 125 c screw torque mounting C C
df m 1000nxm33 - t s 000 3 / 6 www.dynexsemi.com static electrical characteristics C per arm t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i rm peak reverse current v r = 33 00v, t j = 150 c 60 ma v f forward voltage i f = 1000a 2.4 v i f = 1000a, t j = 125c 2.5 v i f = 1000a, t j = 150c 2.4 v l m i nductance - 25 nh dynamic electrical characteristics C per arm t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 10 00a v r = 1800v di f /dt = 27 00a/s 570 c i rr peak reverse recovery current 615 a e rec reverse recovery energy 670 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 10 00a v r = 1800v di f /dt = 27 00a/s 935 c i rr peak reverse recovery current 775 a e rec reverse recovery energy 1150 mj t case = 150c unless stated otherwise symbol parameter test conditions min typ. max units q rr reverse recovery charge i f = 10 00a v r = 1800v di f /dt = 27 00a/s 1070 c i rr peak reverse recovery current 800 a e rec reverse recovery energy 1300 mj
df m 1000nxm33 - t s 000 4 /6 www.dynexsemi.com fig. 3 diode typical forward characteristics fig. 4 transient thermal impedance fig. 5 dc current rating vs case temperature fig. 6 reverse bias safe operating area (rbsoa)
df m 1000nxm33 - t s 000 5 / 6 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 90 0g module outline type code: n fig. 7 module outline drawing
df m 1000nxm33 - t s 000 6 /6 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product info rmation be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likel y to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume product ion is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the cur rent version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dynex semiconductor ltd. 2013 . technical documentation C not for resale.
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